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Datasheet IXTA80N10T Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IXTA80N10T | Power MOSFET ( Transistor ) TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTA80N10T IXTP80N10T
VDSS ID25
RDS(on)
= = ≤
100V 80A 14mΩ
TO-263 AA (IXTA)
G S
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C |
 IXYS |
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| 1 | IXTA80N10T7 | Power MOSFET ( Transistor ) Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA80N10T7
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
100 80 14
V A mΩ
Symbol
VDSS VDGR VGSM ID25 IDM IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; |
 IXYS Corporation |
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