Datasheet IXTA3N60P Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXTA3N60P	Power MOSFET ( Transistor ) PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 3N60P IXTP 3N60P IXTY 3N60P VDSS ID25 RDS(on) = 600 = 3.0 ≤ 2.9 V A Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25° C to 150° C TJ =	IXYS

IXTA3N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXTA3N150HV	High Voltage Power MOSFET Preliminary Technical Information High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA3N150HV VDSS = ID25 = RDS(on) ≤ 1500V 3A 7.3Ω TO-263 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Cond	IXYS
IXTA3N50D2	Depletion Mode MOSFET Depletion Mode MOSFET IXTA3N50D2 IXTP3N50D2 VDSX ID(on) RDS(on) = > ≤ 500V 3A 1.5Ω N-Channel TO-263 AA (IXTA) Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C Maximum Ratings 500 ±20 ±30 125	IXYS Corporation
IXTA3N50P	(IXTx3N50P) PolarHV Power MOSFET PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 3N50P IXTP 3N50P IXTY 3N50P RDS(on) VDSS ID25 = 500 V = 3.6 A ≤ 2.0 Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ =	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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