IXTA2N80
IXYS Corporation
High Voltage MOSFETAdvanced Technical Information
High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated
IXTA 2N80 IXTP 2N80
VDSS ID25
RDS(on)
= 800 V = 2 A = 6.2 Ω
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight
Test Conditio
IXTA2N100P
Power MOSFET ( Transistor )PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA2N100P IXTP2N100P IXTY2N100P
VDSS = ID25 = ≤RDS(on)
1000V 2.0A 7.5Ω
TO-263 (IXTA)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dV/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C,
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IXTA2N100
High Voltage MOSFETHigh Voltage MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA2N100 IXTP2N100
VDSS = ID25 = ≤RDS(on)
1000V 2A 7Ω
TO-263 (IXTA)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dV/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Contin
IXYS Corporation
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