Datasheet IXTA2N100P Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXTA2N100P	Power MOSFET ( Transistor ) PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA2N100P IXTP2N100P IXTY2N100P VDSS = ID25 = ≤RDS(on) 1000V 2.0A 7.5Ω TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C,	IXYS

IXTA2N1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXTA2N100P	Power MOSFET ( Transistor ) PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA2N100P IXTP2N100P IXTY2N100P VDSS = ID25 = ≤RDS(on) 1000V 2.0A 7.5Ω TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C T	IXYS
IXTA2N100	High Voltage MOSFET High Voltage MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA2N100 IXTP2N100 VDSS = ID25 = ≤RDS(on) 1000V 2A 7Ω TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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