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Datasheet IXRFD615X2 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IXRFD615X2 | 15A Dual Low-Side RF MOSFET Driver 15 A Dual Low-Side RF MOSFET Driver IXRFD615X2
Description
The IXRFD615X2 is a dual CMOS high-speed, high-current gate driver specifically designed to drive MOSFETs in PushPull and Class E Push-Pull HF RF applications as well as other applications requiring ultrafast rise and fall times or short mi |  IXYS | mosfet |
IXR Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IXR100 | Isolated / Self-Powered / Temperature Sensor Conditioning 4-20mA TWO-WIRE TRANSMITTER
®
IXR100
Isolated, Self-Powered, Temperature Sensor Conditioning 4-20mA TWO-WIRE TRANSMITTER
FEATURES
q 1500Vrms ISOLATION q TRUE TWO-WIRE OPERATION : Power and Signal on One Wire Pair q RESISTANCE OR VOLTAGE INPUT q DUAL MATCHED CURRENT SOURCES: 400µA at 7V q WIDE SUPPLY RA  Burr-Brown Corporation sensor | | |
| 2 | IXRA15N120 | IGBT with Reverse Blocking capability Advanced Technical Information
IXRP 15N120 IXRA 15N120
IGBT with Reverse Blocking capability
VCES = ±1200 V IC25 = 25 A VCE(sat) = 2.5 V typ.
IXRP 15N120 C
IXRA 15N120
TO-220
G E
G
C
C (TAB) E
G
CE
C (TAB)
TO-263
G = Gate, E = Emitter, C = Collector, TAB = Collecto IXYS igbt | | |
| 3 | IXRFD615X2 | 15A Dual Low-Side RF MOSFET Driver 15 A Dual Low-Side RF MOSFET Driver IXRFD615X2
Description
The IXRFD615X2 is a dual CMOS high-speed, high-current gate driver specifically designed to drive MOSFETs in PushPull and Class E Push-Pull HF RF applications as well as other applications requiring ultrafast rise and fall times or short mi IXYS mosfet | | |
| 4 | IXRFD630 | 30A Low-Side RF MOSFET Driver 30 A Low-Side RF MOSFET Driver IXRFD630
Features
Description
•High Peak Output Current •Low Output Impedance •Low Quiescent Supply Current •Low Propagation Delay •High Capacitive Load Drive Capability •Wide Operating Voltage Range
Applications
•RF MOSFET Driver •Class D and E RF G IXYS mosfet | | |
| 5 | IXRH40N120 | Power Discretes/IGBTs/Reverse Blocking Series
IXRH 40N120 IGBT with Reverse Blocking capability
VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ.
C
TO-247 AD
G C E
G E
C (TAB) C = Collector, TAB = Collector
G = Gate, E = Emitter,
IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 0/15 V; RG = 22  IXYS Corporation igbt | | |
| 6 | IXRH50N100 | IGBT with Reverse Blocking capability Advanced Technical Information
IGBT with Reverse Blocking capability
IXRH 50N120 VCES = 1000 / 1200 V IXRH 50N100 IC25 = 60 A
VCE(sat) = 2.5 V tf = 75 ns
TO-247 AD
G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector
C G
C (TAB)
IGBT Symbol VCES VGES IC25 IC90 ICM V IXYS Corporation igbt | | |
| 7 | IXRH50N120 | IGBT with Reverse Blocking capability Advanced Technical Information
IGBT with Reverse Blocking capability
IXRH 50N120 VCES = 1000 / 1200 V IXRH 50N100 IC25 = 60 A
VCE(sat) = 2.5 V tf = 75 ns
TO-247 AD
G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector
C G
C (TAB)
IGBT Symbol VCES VGES IC25 IC90 ICM V IXYS Corporation igbt | |
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