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Datasheet IXFZ140N25T Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | IXFZ140N25T | GigaMOS HiperFET Power MOSFET Advance Technical Information
GigaMOSTM HiperFETTM Power MOSFET
(Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFZ140N25T
VDSS ID25
= =
RDS(on) ≤ ≤ trr
250V 100A 17mΩ 200ns
D
DE475
D
D
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ | IXYS Corporation | mosfet |
IXF Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | IXF18102 | 10Gbps Physical Layer Device product brief
Intel IXF18102
®
10Gbps Physical Layer Device for STS-192c/STM 64c POS/GFP
www.datasheet4u.com
Product Description The Intel® IXF18102 is a highly integrated framer solution for STS-192c/STM 64c port applications. The IXF18102 supports various modes of operation for transport of H Intel Corporation data | | |
2 | IXF18104 | 10 Gigabit Lan PHY product brief
Intel IXF18104
®
10 Gigabit LAN PHY
www.datasheet4u.com
Product Overview The Intel® IXF18104 is a highly integrated solution for 10GbE Local Area Network (LAN) port applications compliant as per IEEE802.3ae specifications. The IXF18104 supports the 10GbE LAN mode of operation for Intel Corporation data | | |
3 | IXFA102N15T | Power MOSFET, Transistor Trench Gate Power MOSFET HiperFETTM
N-Channel Enhancement Mode Avalanche Rated
IXFA102N15T IXFH102N15T IXFP102N15T
VDSS ID25
RDS(on) trr
= 150V = 102A ≤ 18mΩ ≤ 120ns
TO-263 (IXFA)
G
S (TAB)
Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC
www.DataShee IXYS Corporation mosfet | | |
4 | IXFA10N60P | Polar MOSFETs Advance Technical Information
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFA 10N60P IXFP 10N60P
VDSS = 600 V ID25 = 10 A RDS(on) ≤ 740 mΩ ≤ 250 ns trr
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Ts IXYS Corporation mosfet | | |
5 | IXFA10N80P | Power MOSFET, Transistor PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
TO-263 AA (IXFA)
IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P
TO-220AB (IXFP)
VDSS ID25 trr
RDS(on)
= 800V = 10A ≤ 1.1Ω ≤ 250ns
TO-3P (IXFQ)
G S D (TAB) G DS D (TAB)
G D S
D (TAB)
Symbol VDSS IXYS Corporation mosfet | | |
6 | IXFA110N15T2 | Power MOSFET, Transistor Preliminary Technical Information
TrenchT2TM HiperFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXFA110N15T2 IXFP110N15T2
VDSS ID25
RDS(on)
= 150V = 110A ≤ 13mΩ
TO-263
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL Tsold Md Weight
www.DataSheet4U.net
Test IXYS Corporation mosfet | | |
7 | IXFA12N50P | Polar MOSFETs Advance Technical Information
IXFA 12N50P IXFP 12N50P
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXFA 12N50P IXFP 12N50P
VDSS ID25
RDS(on) trr
= 500 = 12 ≤ 0.5 ≤ 200
V A Ω ns
Symbol VDSS VDGR VGSM VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg IXYS Corporation mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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