Datasheet IXFX32N100P Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXFX32N100P	Power MOSFET ( Transistor ) PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK32N100P IXFX32N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient	IXYS

IXFX32N1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXFX32N100Q3	Power MOSFET ( Transistor ) Advance Technical Information HiperFETTM Power MOSFETs Q3-Class IXFK32N100Q3 IXFX32N100Q3 N-Channel Enhancement Mode Fast Intrinsic Rectifier VDSS = ID25 = ≤RDS(on) trr ≤ 1000V 32A 320mΩ 250ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Ts	IXYS
IXFX32N100P	Power MOSFET ( Transistor ) PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK32N100P IXFX32N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	IXYS

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Número de pieza	Descripción	Fabricantes	PDF
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