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Datasheet IXFX120N20 Equivalent ( PDF )

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1 IXFX120N20   HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet IXFX 120N20 IXFK 120N20 VDSS ID25 RDS(on) = 200 V = 120 A = 17 mW trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RG
 IXYS Corporation
IXYS Corporation		 datasheet IXFX120N20 pdf

IXFX120 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IXFX120N25

HiPerFET Power MOSFETs

Advance Technical Information HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 120N25 IXFK 120N25 VDSS ID25 RDS(on) = 250 V = 120 A = 22 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Condi
 IXYS
IXYS		 datasheet pdf - IXYS
IXFX120N20

HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet IXFX 120N20 IXFK 120N20 VDSS ID25 RDS(on) = 200 V = 120 A = 17 mW trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ =
 IXYS Corporation
IXYS Corporation		 datasheet pdf - IXYS Corporation
IXFX120N30T

GigaMOS Power MOSFET

Advance Technical Information GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK120N30T IXFX120N30T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 300V 120A 24mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA E
 IXYS
IXYS		 datasheet pdf - IXYS


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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