Datasheet IXFN32N120P Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXFN32N120P	Polar HiPerFET Power MOSFET PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN32N120P VDSS = 1200V ID25 = 32A RDS(on) ≤ 310mΩ ≤ 300ns trr miniBLOC E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°	IXYS Corporation

IXFN32N1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXFN32N120	HiPerFET Power MOSFETs Advanced Technical Data HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 32N120 VDSS ID25 RDS(on) = 1200V = 32A = 0.35Ω D G S S Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL www.DataSheet4U.net T	IXYS Corporation
IXFN32N120P	Polar HiPerFET Power MOSFET PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN32N120P VDSS = 1200V ID25 = 32A RDS(on) ≤ 310mΩ ≤ 300ns trr miniBLOC E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test	IXYS Corporation
IXFN32N100P	Polar Power MOSFET HiPerFET PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA www.DataSheet4U.net IXFN32N100P VDSS ID25	IXYS Corporation

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