Datasheet IXFN26N100P Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXFN26N100P	Polar Power MOSFET HiPerFET PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md www.DataSheet4U.net IXFN26N100P VDSS ID25 RDS(on) trr = 1000V = 23A ≤ 390mΩ ≤ 300ns Test Conditions TJ = 25°C to 150	IXYS Corporation

IXFN26N1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXFN26N120P	Polar Power MOSFET PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA www.DataSheet4U.net IXFN26N120P VDSS ID25	IXYS Corporation
IXFN26N100P	Polar Power MOSFET HiPerFET PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md www.DataSheet4U.net IXFN26N100P VDSS ID25 RDS(on) trr = 1000V = 23A ≤ 390mΩ ≤ 300ns Test Conditio	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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