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Datasheet IXFN24N100 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IXFN24N100 | (IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET HiPerFETTM Power MOSFET
Single MOSFET Die
Preliminary data sheet
VDSS
ID25
RDS(on) 0.39 Ω 0.43 Ω
IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns
Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25° |
 IXYS Corporation |
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| 1 | IXFN24N100F | HiPerRF Power MOSFETs Advance Technical Information
HiPerRFTM Power MOSFETs
F-Class: MegaHertz Switching
IXFN 24N100F
VDSS ID25
RDS(on)
= = =
1000 24 0.39
V A Ω
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
D
trr ≤ 250 ns
G S
S
Symbol
V
DSS
T |
IXYS Corporation |
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