Datasheet IXFN180N07 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXFN180N07	HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 60 V 70 V 70 V ID25 200 A 180 A 200 A trr £ 250 ns RDS(on) 6 mW 7 mW 6 mW Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ	IXYS

IXFN180 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXFN180N20	Power MOSFETs Single Die MOSFET HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL£ 1 mA t = 1 min t=1s Test Conditions TJ =	IXYS
IXFN180N15P	PolarHT HiPerFET Power MOSFET PolarHTTM HiPerFET IXFN 180N15P Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 RDS(on) trr = 150 V = 150 A ≤ 11 mΩ ≤ 200 ns Symbol VDSS VDGR VDSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md VISOL	IXYS
IXFN180N10	HiPerFET Power MOSFET Single MOSFET Die HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet IXFN 180N10 VDSS ID25 RDS(on) = 100 V = 180 A = 8 mΩ trr ≤ 250 ns Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case f	ETC

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Número de pieza	Descripción	Fabricantes	PDF
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