IXFK20N120P
IXYS Corporation
Polar Power MOSFET HiPerFETPolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque Mount
IXFK20N120
HiPerFET Power MOSFETsAdvanced Technical Information
HiPerFETTM Power MOSFETs
IXFK 20N120 IXFX 20N120
VDSS ID25
RDS(on)
= 1200 V = 20 A = 0.75 Ω
trr ≤ 300 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M�
IXYS Corporation
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