IXFK180N10
IXYS Corporation
(IXFK180N10 / IXFX180N10) Single MOSFET Die
HiPerFETTM Power MOSFETs
Single MOSFET Die
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Co
IXFK180N25T
GigaMOS Power MOSFETAdvance Technical Information
GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK180N25T IXFX180N25T
RDS(on) ≤ ≤ trr
TO-264 (IXFK)
VDSS ID25
= =
250V 180A 12.9mΩ 200ns
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt P
IXYS
PDF
IXFK180N15P
Polar HiPerFET Power MOSFETAdvance Technical Information
PolarTM HiPerFET Power MOSFET
N-Channel Enhancement Mode
IXFK 180N15P
VDSS ID25
= 150 V = 180 A RDS(on) ≤ 11 mΩ
Symbol VDSS VDGR VDSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 175°C TJ
IXYS
PDF
IXFK180N25T
GigaMOS Power MOSFETAdvance Technical Information
GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK180N25T IXFX180N25T
RDS(on) ≤ ≤ trr
TO-264 (IXFK)
VDSS ID25
= =
250V 180A 12.9mΩ 200ns
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt P
IXYS
PDF