Datasheet IXFK120N25P Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXFK120N25P	PolarHT HiPerFET Power MOSFET PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFK 120N25P IXFX 120N25P VDSS = ID25 = RDS(on) = trr < 250 V 120 A 24 mΩ 200 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25	IXYS

IXFK120N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXFK120N20	HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet IXFX 120N20 IXFK 120N20 VDSS ID25 RDS(on) = 200 V = 120 A = 17 mW trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ =	IXYS Corporation
IXFK120N20P	PolarHT HiPerFET Power MOSFET Advanced Technical Information PolarHTTM HiPerFET IXFH 120N20P IXFK 120N20P Power MOSFET N-Channel Enhancement Mode Avalanche Rated, Fast Intrinsic Diode VDSS = 200 V ID25 = 120 A RDS(on) ≤ 22 mΩ ≤ 140 ns trr Symbol Test Conditions TJ = 25°C to 175	IXYS Corporation
IXFK120N65X2	Power MOSFET ( Transistor ) Preliminary Technical Information X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK120N65X2 IXFX120N65X2 VDSS = ID25 = RDS(on)  650V 120A 24m TO-264P (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM	IXYS

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Número de pieza	Descripción	Fabricantes	PDF
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