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Datasheet IXFH9N80 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IXFH9N80 | Power MOSFETs Preliminary Data Sheet
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS
ID25
RDS(on)
trr
IXFH8N80 800V 8A IXFH9N80 800V 9A
1.1Ω 250 ns 0.9Ω 250 ns
TO-247 AD (IXFH)
Symbol
Test Conditions
Maximum Ratings
VDSS VDGR VGS VGSM ID25
IDM
IAR
TJ = |
 IXYS |
 |
| 2 | IXFH9N80Q | Power MOSFETs HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt
IXFH 9N80Q IXFT 9N80Q
VDSS I
D25
RDS(on)
= 800 V = 9A = 1.1 Ω
trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM I
D25
I
DM
IAR EAR EAS dv/dt
PD TJ TJM T
stg
TL Md Weight
Symbol
VDSS
V GS(th)
IGSS
IDSS
RDS(on |
IXYS |
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| 1 | IXFH9N80Q | HiPerFET Power MOSFETs Q-Class HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt
IXFH 9N80Q IXFT 9N80Q
VDSS ID25 RDS(on)
= 800 V = 9A = 1.1 Ω
trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ |
 ETC |
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