Datasheet IXFH6N100F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXFH6N100F	Power MOSFETs Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 6N100F VDSS IXFT 6N100F ID25 RDS(on) = 1000 V = 6A = 1.9 Ω trr ≤ 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tst	IXYS Corporation

IXFH6N1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXFH6N100	Power MOSFETs HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM6N90 IXFH/IXFM6N100 V DSS 900 V 1000 V I D25 6A 6A trr £ 250 ns R DS(on) 1.8 W 2.0 W Symbol VDSS V DGR VGS VGSM ID25 IDM I AR EAR dv/dt PD T J TJM T stg TL Md Weight Symbol VDS	IXYS
IXFH6N120P	Power MOSFET ( Transistor ) Advance Technical Information PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA6N120P IXFP6N120P IXFH6N120P VDSS ID25 RDS(on) = 1200V = 6A ≤ 2.4Ω TO-263 AA (IXFA) G S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS	IXYS Corporation
IXFH6N100F	Power MOSFETs Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 6N100F VDSS IXFT 6N100F ID25 RDS(on) = 1000 V = 6A = 1.9 Ω trr ≤ 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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