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Datasheet IXFH60N60X Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 IXFH60N60X   Power MOSFET ( Transistor )

X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFQ60N60X IXFH60N60X VDSS = ID25 = RDS(on) 600V 60A 55m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions T
 IXYS
IXYS		 datasheet IXFH60N60X pdf

IXFH60N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IXFH60N60X

Power MOSFET ( Transistor )

X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFQ60N60X IXFH60N60X VDSS = ID25 = RDS(on) 600V 60A 55m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weigh
 IXYS
IXYS		 datasheet pdf - IXYS
IXFH60N50P3

Polar3 HiperFET Power MOSFET

Advance Technical Information Polar3TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT60N50P3 IXFQ60N50P3 IXFH60N50P3 VDSS ID25 RDS(on) = 500V = 60A ≤ 100mΩ TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGS
 IXYS Corporation
IXYS Corporation		 datasheet pdf - IXYS Corporation
IXFH60N20

HiPerFET Power MOSFETs

ADVANCE TECHNICAL INFORMATION HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt IXFH 60N20 IXFT 60N20 VDSS = 200 V = 60 A ID25 RDS(on) = 33 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight www.D
 IXYS Corporation
IXYS Corporation		 datasheet pdf - IXYS Corporation


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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