|
|
Datasheet IXFH40N30 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | IXFH40N30 | (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching w
w
w
.d
e e h s a t a
. u t4
m o c
|
IXYS Corporation |
|
3 | IXFH40N30 | HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 300 V 300 V 300 V
ID25
RDS(on)
35 A 100 mW 40 A 85 mW 40 A 88 mW
trr £ 200 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg
Test Conditions |
IXYS Corporation |
|
2 | IXFH40N30Q | Power MOSFETs HiPerFETTM Power MOSFETs
Q-Class
Not for New Designs
IXFH40N30Q IXFT40N30Q
VDSS = 300V ID25 = 40A ≤RDS(on) 85mΩ
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg TL Tsold
Md Weight
Test Conditions TJ = 25°C to 150 |
IXYS |
|
1 | IXFH40N30Q | HiPerFET Power MOSFETs Q-Class HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg
IXFH 40N30Q IXFT 40N30Q
VDSS ID25
RDS(on)
trr
= 300 V = 40 A = 80 mW £ 250 ns
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Condition |
ETC |
Esta página es del resultado de búsqueda del IXFH40N30. Si pulsa el resultado de búsqueda de IXFH40N30 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |