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Datasheet IXFH30N50 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IXFH30N50 | HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH/IXFT 30N50 IXFH/IXFT 32N50 500 V 500 V
ID25 30 A 32 A
RDS(on) 0.16 W 0.15 W
trr £ 250 ns
TO-247 AD (IXFH)
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAS EAR dv/dt PD TJ TJM Tstg TL Md Weight
Test Con |
 IXYS |
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| 3 | IXFH30N50 | HiPerFET Power MOSFETs
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH/IXFT 30N50 IXFH/IXFT 32N50 500 V 500 V
ID25 30 A 32 A
RDS(on) 0.16 W 0.15 W
trr £ 250 ns
TO-247 AD (IXFH)
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAS EAR dv/dt PD TJ TJM Tstg T |
IXYS |
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| 2 | IXFH30N50P | PolarHV Power HiPerFET MOSFET Advance Technical Information
PolarHVTM Power HiPerFET MOSFET
N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode
IXFH 30N50P IXFT 30N50P IXFQ 30N50P IXFV 30N50P IXFV 30N50PS
VDSS ID25
RDS(on) trr
= 500 V = 30 A = 200 mΩ < 200 ns
TO-3P (IXFQ)
Symbol VDSS VDGR |
IXYS |
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| 1 | IXFH30N50Q3 | Power MOSFET ( Transistor ) www.DataSheet.co.kr
Advance Technical Information
HiperFETTM Power MOSFETs Q3-Class
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFT30N50Q3 IXFH30N50Q3
VDSS ID25
RDS(on)
= 500V = 30A ≤ 200mΩ
TO-268 (IXFT) G S D (Tab) V V V V A A A J V/ns W °C °C °C °C °C Nm/lb. |
 IXYS Corporation |
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