IXBT6N170
IXYS
BIMOSFET Monolithic Bipolar MOS TransistorHigh Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBH6N170 IXBT6N170
VCES = IC90 = VCE(sat) ≤
1700V 6A 3.4V
Symbol
VCES VCGR
VGES VGEM
IC25 IC90 ICM
SSOA (RBSOA)
PC
TJ TJM Tstg
TTLSOLD Md
Weight
Test Conditions TC = 25°C to 150°C T