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IXBT42N170 전자부품 데이터시트



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IXBT42N170  

IXYS Corporation
IXYS Corporation

IXBT42N170

(IXBH42N170 / IXBT42N170) High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 42N170 IXBT 42N170 VCES = 1700 V = 75 A IC25 VCE(sat) = 3.6 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg Test Conditions T



IXBT42N170A  

IXYS Corporation
IXYS Corporation

IXBT42N170A

(IXBH42N170A / IXBT42N170A) BIMOSFET Monolithic Bipolar MOS Transistor

Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 42N170A IXBT 42N170A VCES IC25 VCE(sat) tfi = 1700 = 42 = 6.0 = 50 V A V ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Ts



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