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Datasheet IXBF9N160 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IXBF9N160 | High Voltage BIMOSFET Advanced Technical Information
High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor
IXBF 9N140 IC25 IXBF 9N160 VCES
VCE(sat) tf
= = = =
7A 1400/1600 V 4.9V 40 ns
1 5
IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 15/0 V; RG = 100 |
 IXYS Corporation |
 |
| 2 | IXBF9N160 | High Voltage BIMOSFET Advanced Technical Information
High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor
IXBF 9N140 IC25 IXBF 9N160 VCES
VCE(sat) tf
= = = =
7A 1400/1600 V 4.9V 40 ns
1 5
IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 15/0 V; RG = 100 |
IXYS Corporation |
|
| 1 | IXBF9N160G | High Voltage BIMOSFET High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM
Monolithic Bipolar MOS Transistor
IXBF 9N160 G
IC25 = 7 A VCES = 1600 V VCE(sat) = 4.9 V tf = 70 ans
1 5
IGBT
Symbol VCES VGES IC25 IC90 ICM VCEK Ptot
Symbol
VCE(sat)
V GE(th)
ICES
IGES t
d(on)
tr td(off) tf Cies Q
Gon
V F
RthJC
Conditions |
 IXYS |
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