IS45S83200J
ISSI
256Mb SYNCHRONOUS DRAMIS42S83200J, IS42S16160J IS45S83200J, IS45S16160J
32Meg x 8, 16Meg x16
256Mb SYNCHRONOUS DRAM
ADVANCED INFORMATION MARCH 2013
FEATURES
• Clock frequency: 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Intern
IS45S83200D
256-MBIT SYNCHRONOUS DRAMIS42S83200D, IS42S16160D IS45S83200D, IS45S16160D
32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM
FEATURES
• Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge
Integrated Silicon Solution
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IS45S83200C
256 Mb Single Data Rate Synchronous DRAMIS45S83200C IS45S16160C 256 Mb Single Data Rate Synchronous DRAM
APRIL 2009
IS45S83200C is organized as 4-bank x 8,388,608-word x 8-bit Synchronous DRAM with LVTTL interface and IS45S16160C is organized as 4-bank x 4,194,304-word x 16-bit. All inputs and outputs are referenced
Integrated Silicon Solution
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