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IS42S32800  

ISSI
ISSI

IS42S32800

2M Words x 32 Bits x 4 Banks (256-Mbit) Synchronous DRAM

IS42S32800 2M Words x 32 Bits x 4 Banks (256-Mbit) Synchronous DRAM P JANUARY 2008 FEATURES • Concurrent auto precharge • Clock rate:166/143 MHz • Fully synchronous operation • Internal pipelined architecture • Four internal banks (2M x 32bit



IS42S32800B  

Integrated Silicon Solution
Integrated Silicon Solution

IS42S32800B

SYNCHRONOUS DYNAMIC RAM

IS42S32800B 2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES · Concurrent auto precharge · Clock rate:166/143 MHz · Fully synchronous operation · Internal pipelined architecture · Four internal banks (2M x 32bit x 4bank) · Program



IS42S32800D  

Integrated Silicon Solution
Integrated Silicon Solution

IS42S32800D

8M x 32 256Mb SYNCHRONOUS DRAM

IS42S32800D IS45S32800D 8M x 32 256Mb SYNCHRONOUS DRAM APRIL 2009 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge �



IS42S32800G  

ISSI
ISSI

IS42S32800G

256Mb SYNCHRONOUS DRAM

IS42S32800G IS45S32800G 8M x 32 256Mb SYNCHRONOUS DRAM AUGUST 2012 FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Pow



IS42S32800J  

ISSI
ISSI

IS42S32800J

256Mb SYNCHRONOUS DRAM

IS42S32800J IS45S32800J 8M x 32 256Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION SEPTEMBER 2014 FEATURES • Clock frequency:166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/pre



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