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Datasheet IRLMS1503 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | IRLMS1503 | HEXFET Power MOSFET PD - 91508D
IRLMS1503
HEXFET® Power MOSFET
l l l l
Generation V Technology Micro6 Package Style Ultra Low RDS(on) N-Channel MOSFET
D D G
1
6
A D D S
VDSS = 30V RDS(on) = 0.10Ω
2
5
3
4
Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced pro |
International Rectifier |
|
2 | IRLMS1503PBF | Power MOSFET ( Transistor )
PD - 95762
IRLMS1503PbF
HEXFET® Power MOSFET
l l l l l
Generation V Technology Micro6 Package Style Ultra Low RDS(on) N-Channel MOSFET Lead-Free
D D G
1
6
A D D S
VDSS = 30V RDS(on) = 0.10Ω
2
5
3
4
Description
Fifth Generation HEXFET® power MOSFETs from Internati |
International Rectifier |
|
1 | IRLMS1503PBF-1 | Power MOSFET ( Transistor ) VDS RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
Qg (typical) ID
(@TA = 25°C)
30 0.10
0.20 6.4 3.2
V
Ω nC A
Features Industry-standard pinout Micro-6 Package
Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification
IRLMS1503PbF-1
HEXF |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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