IRLML6302
International Rectifier
HEXFET Power MOSFETPD - 91259G
HEXFET® Power MOSFET
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IRLML6302
VDSS = -20V
Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching
G 1 3 D S 2
RDS(on) = 0.60Ω
Descriptio
IRLML6302PBF
International Rectifier
HEXFET Power MOSFETPD - 94947A
IRLML6302PbF
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Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching Lead-Free
HEXFET® Power MOSFET
D
VDSS = -20V
G S
RDS(on) = 0.60Ω
IRLML6302PBF-1
International Rectifier
Power MOSFET ( Transistor )VDS RDS(on) max
(@VGS = -4.5V)
Qg (typical) ID
(@TA = 25°C)
-20 0.60 2.4 -0.78
V Ω nC A
IRLML6302PbF-1
HEXFET® Power MOSFET
G1 S2
3D
Micro3TM
Features Industry-standard pinout SOT-23 Package
Compatible with Existing Surface Mount Techniques RoHS Comp