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Datasheet IRLML5203 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | IRLML5203 | HEXFET Power MOSFET PD - 93967
PROVISIONAL
IRLML5203
HEXFET® Power MOSFET RDS(on) max (mΩ)
98@VGS = -10V 165@VGS = -4.5V
l l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge
VDSS
-30V
ID
-3.0A -2.6A
Description
These P-channel MOSFETs from International Rect |
International Rectifier |
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2 | IRLML5203GPbF | Power MOSFET ( Transistor ) l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free
Description
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. Th |
International Rectifier |
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1 | IRLML5203PBF | Power MOSFET ( Transistor ) l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l RoHS Compliant, Halogen-Free
Description
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per |
International Rectifier |
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Sanken |
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