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Datasheet IRLML5103 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRLML5103 | HEXFET Power MOSFET PD - 91260E
HEXFET® Power MOSFET
l l l l l l l
IRLML5103
VDSS = -30V
Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching
D
G S
RDS(on) = 0.60Ω
Description
Fifth Generation HEXFETs from Internationa |
 International Rectifier |
 |
| 3 | IRLML5103PbF | HEXFET Power MOSFET IRLML5103PbF
l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching l Lead-Free
l RoHS Compliant, Halogen-Free
HEXFET® Power MOSFET
G 1 VDSS = -30V
3D
S 2 RDS(on) = 0.60Ω
Description
Fifth Ge |
International Rectifier |
|
| 2 | IRLML5103PBF-1 | Power MOSFET ( Transistor ) VDS RDS(on) max
(@VGS = -10V)
Qg (typical) ID
(@TA = 25°C)
-30 0.60 3.4 -0.76
V Ω nC A
IRLML5103PbF-1
HEXFET® Power MOSFET
G1 S2
3D
Micro3™
Features Industry-standard pinout SOT-23 Package
Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qua |
International Rectifier |
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| 1 | IRLML5103TRPbF | HEXFET Power MOSFET IRLML5103PbF
l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching l Lead-Free
l RoHS Compliant, Halogen-Free
HEXFET® Power MOSFET
G 1 VDSS = -30V
3D
S 2 RDS(on) = 0.60Ω
Description
Fifth Ge |
International Rectifier |
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