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IRLI630G 전자부품 데이터시트



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IRLI630G  

International Rectifier
International Rectifier

IRLI630G

Power MOSFET ( Transistor )

Previous Datasheet Index Next Data Sheet PD - 9.1236 IRLI630G HEXFET® Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V Fast Switching Ease of parall




관련 부품 IRLI63 상세설명

IRLI630A  

  
ADVANCED POWER MOSFET

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Ty



Fairchild Semiconductor
Fairchild Semiconductor

PDF



IRLI630A  

  
Advanced Power MOSFET

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Ty



International Rectifier
International Rectifier

PDF




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