IRLI620A
Fairchild Semiconductor
Power MOSFET ( Transistor )$GYDQFHG 3RZHU 026)(7
IRLW/I620A
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA
IRLI620GPBF
HEXFET Power MOSFETPD- 95753
IRLI620GPbF
Lead-Free
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TO-220 Full-Pak Package Outline
International Rectifier
PDF
IRLI620G
Power MOSFET ( Transistor )Previous Datasheet
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PD - 9.1235
IRLI620G
HEXFET® Power MOSFET
Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V Fast Switching Ease of paralleling Description
Third Generation HEXFE
International Rectifier
PDF