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IRLI620A  

Fairchild Semiconductor
Fairchild Semiconductor

IRLI620A

Power MOSFET ( Transistor )

$GYDQFHG 3RZHU 026)(7 IRLW/I620A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA




관련 부품 IRLI62 상세설명

IRLI620GPBF  

  
HEXFET Power MOSFET

PD- 95753 IRLI620GPbF • Lead-Free www.irf.com 1 8/23/04 IRLI620GPbF 2 www.irf.com IRLI620GPbF www.irf.com 3 IRLI620GPbF 4 www.irf.com IRLI620GPbF www.irf.com 5 IRLI620GPbF 6 www.irf.com IRLI620GPbF www.irf.com 7 IRLI620GPbF TO-220 Full-Pak Package Outline



International Rectifier
International Rectifier

PDF



IRLI620G  

  
Power MOSFET ( Transistor )

Previous Datasheet Index Next Data Sheet PD - 9.1235 IRLI620G HEXFET® Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V Fast Switching Ease of paralleling Description Third Generation HEXFE



International Rectifier
International Rectifier

PDF




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