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IRLI530G 전자부품 데이터시트



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IRLI530G  

Vishay
Vishay

IRLI530G

Power MOSFET ( Transistor )

Power MOSFET IRLI530G, SiHLI530G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5.0 V 28 3.8 14 Single 0.16 TO-220 FULLPAK D G GDS S N-Channel MOSFET ORDERING INFORMATION Package Lead (




관련 부품 IRLI53 상세설명

IRLI530NPBF  

  
HEXFET Power MOSFET

IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description l PD - 95635 HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.10Ω G S ID = 12A Fifth



International Rectifier
International Rectifier

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IRLI530A  

  
HEXFET Power MOSFET

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0. 101Ω (T



Fairchild Semiconductor
Fairchild Semiconductor

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IRLI530N  

  
HEXFET Power MOSFET

PD - 9.1350B PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l IRLI530N HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.10Ω G ID = 12A S Fifth



International Rectifier
International Rectifier

PDF




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