IRLI530G
Vishay
Power MOSFET ( Transistor )Power MOSFET
IRLI530G, SiHLI530G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 5.0 V
28 3.8 14 Single
0.16
TO-220 FULLPAK
D
G
GDS
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (
IRLI530NPBF
HEXFET Power MOSFETIRLI530NPbF
Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description
l
PD - 95635
HEXFET® Power MOSFET
D
VDSS = 100V RDS(on) = 0.10Ω
G S
ID = 12A
Fifth
International Rectifier
PDF
IRLI530A
HEXFET Power MOSFET$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0. 101Ω (T
Fairchild Semiconductor
PDF
IRLI530N
HEXFET Power MOSFETPD - 9.1350B
PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description
l l
IRLI530N
HEXFET® Power MOSFET
D
VDSS = 100V RDS(on) = 0.10Ω
G
ID = 12A
S
Fifth
International Rectifier
PDF