Datasheet IRL630PBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRL630PBF	HEXFET Power MOSFET PD- 95756 IRL630PbF Lead-Free www.irf.com 1 8/24/04 Free Datasheet http:/// IRL630PbF 2 www.irf.com Free Datasheet http:/// IRL630PbF www.irf.com 3 Free Datasheet http:/// IRL630PbF 4 www.irf.com Free Datasheet http://www.	International Rectifier

IRL630 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRL630	Power MOSFET ( Transistor ) Previous Datasheet Index Next Data Sheet PD -9.1255 IRL630 HEXFET ® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(ON) Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling Description Third Gener	International Rectifier
IRL630	Power MOSFET ( Transistor ) IRL630, SiHL630 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 40 5.5 24 Single D FEATURES 200 V 0.40 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic Level Gate Drive • RDS(on) Spe	Vishay
IRL630S	Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7 IRL630S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V �	Fairchild Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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