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Datasheet IRL630 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | IRL630 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRL630
FEATURES
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω ( |
 Fairchild Semiconductor |
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| 8 | IRL630 | Power MOSFET ( Transistor ) Previous Datasheet
Index
Next Data Sheet
PD -9.1255
IRL630
HEXFET ® Power MOSFET
Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(ON) Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling Description
Third Generation HEXFETs from I |
 International Rectifier |
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| 7 | IRL630 | Power MOSFET ( Transistor ) IRL630, SiHL630
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 40 5.5 24 Single
D
FEATURES
200 V 0.40
• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic Level Gate Drive • RDS(on) Specified at VGS = 4 V |
 Vishay |
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| 6 | IRL630A | Advanced Power MOSFET $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω (Typ.)
IR |
Fairchild Semiconductor |
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