IRL620S
Fairchild Semiconductor
Power MOSFET ( Transistor )$GYDQFHG 3RZHU 026)(7
IRL620S
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA (M
IRL620S
International Rectifier
Power MOSFET ( Transistor )Previous Datasheet
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PD -9.1218
IRL620S
HEXFET® Power MOSFET
Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at VGS=4V & 5V Fast Switching Description
Thir
IRL620S
Vishay
Power MOSFET ( Transistor )Power MOSFET
IRL620S, SiHL620S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
200 VGS = 10 V
16
Qgs (nC)
2.9
Qgd (nC)
9.6
Configuration
Single
0.80
D2PAK (TO-263)
D
GD S
G
S N-Channel MOSFET
FEATURES • Halogen-free Acco
IRL620SPBF
International Rectifier
HEXFET Power MOSFETPD- 95591
IRL620SPbF
Lead-Free
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1
07/21/04
IRL620SPbF
2
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IRL620SPbF
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3
IRL620SPbF
4
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IRL620SPbF
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5
IRL620SPbF
6
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IRL620SPbF
Peak Diode Recovery dv/dt