IRL3803V
International Rectifier
Power MOSFET ( Transistor )l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
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Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing tech
IRL3803VL
International Rectifier
(IRL3803Vx) HEXFET Power MOSFET
PD - 94735
HEXFET® Power MOSFET
l l l l l l l
IRL3803VS IRL3803VL
VDSS = 30V
Logic-Level Gate Drive Advanced Process Technology Surface Mount (IRL3803VS) Low-profile through-hole (IRL3803VL) 175°C Operating Temperature Fast Switching
IRL3803VLPbF
International Rectifier
Power MOSFET ( Transistor )l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRL3803VS)
l Low-profile through-hole (IRL3803VL)
l 175°C Operating Temperature l Fast Switching
G
l Fully Avalanche Rated
l Lead-Free
Description
Advanced HEXFET® Power MOSFETs
IRL3803VPBF
International Rectifier
HEXFET Power MOSFET
PD - 95955
IRL3803VPbF
HEXFET® Power MOSFET
l
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l
D
VDSS = 30V RD
IRL3803VS
International Rectifier
(IRL3803Vx) HEXFET Power MOSFET
PD - 94735
HEXFET® Power MOSFET
l l l l l l l
IRL3803VS IRL3803VL
VDSS = 30V
Logic-Level Gate Drive Advanced Process Technology Surface Mount (IRL3803VS) Low-profile through-hole (IRL3803VL) 175°C Operating Temperature Fast Switching
IRL3803VSPBF
International Rectifier
Power MOSFET ( Transistor )l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRL3803VS)
l Low-profile through-hole (IRL3803VL)
l 175°C Operating Temperature l Fast Switching
G
l Fully Avalanche Rated
l Lead-Free
Description
Advanced HEXFET® Power MOSFETs