IRL3303
International Rectifier
HEXFET POWER MOSFETPD - 9.1322B
IRL3303
HEXFET® Power MOSFET
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Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 30V
G S
RDS(on) = 0.026Ω ID = 38A
Description
Fift
IRL3303L
International Rectifier
HEXFET Power MOSFETPD - 9.1323B
IRL3303S/L
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Logic-Level Gate Drive Advanced Process Technology Surface Mount (IRL3303S) Low-profile through-hole (IRL3303L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated
HEXFET® Power MOSFET
D
VDSS = 30V RDS(o
IRL3303LPBF
International Rectifier
Power MOSFET ( Transistor )
Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRL3303S) l Low-profile through-hole (IRL3303L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
HEXFET® Power MOSFET
IRL3303PBF
International Rectifier
Power MOSFET ( Transistor )• Lead-Free
PD - 94887
IRL3303PbF
HEXFET Power MOSFET
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1 12/11/03
IRL3303PbF
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IRL3303PbF
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3
IRL3303PbF
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IRL3303PbF
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5
IRL3303PbF
6 www.irf.com
IRL3303PbF
D.U.T
+
-
RG
Peak Diode
IRL3303S
International Rectifier
HEXFET Power MOSFETPD - 9.1323B
IRL3303S/L
l l l l l l l
Logic-Level Gate Drive Advanced Process Technology Surface Mount (IRL3303S) Low-profile through-hole (IRL3303L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated
HEXFET® Power MOSFET
D
VDSS = 30V RDS(o
IRL3303SPBF
International Rectifier
Power MOSFET ( Transistor )
Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRL3303S) l Low-profile through-hole (IRL3303L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
HEXFET® Power MOSFET