IRL2505
International Rectifier
Power MOSFET ( Transistor )l Logic-Level Gate Drive
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier utilize advanc
IRL2505L
International Rectifier
Power MOSFET ( Transistor )
PD - 91326D
IRL2505S/L
Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL2505S) l Low-profile through-hole (IRL2505L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l
HEXFET® P
IRL2505LPBF
International Rectifier
HEXFET Power MOSFET
Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRL2505S) l Low-profile through-hole (IRL2505L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
HEXFET Power MOSFET
D
IRL2505PBF
International Rectifier
HEXFET Power MOSFETl Logic-Level Gate Drive
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
l Lead-Free Description
Fifth Generation HEXFETs from International Rectifier utiliz
IRL2505S
International Rectifier
Power MOSFET ( Transistor )
PD - 91326D
IRL2505S/L
Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL2505S) l Low-profile through-hole (IRL2505L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l
HEXFET® P
IRL2505SPBF
International Rectifier
HEXFET Power MOSFET
Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRL2505S) l Low-profile through-hole (IRL2505L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
HEXFET Power MOSFET
D