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Datasheet IRL2203N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | IRL2203N | Power MOSFET ( Transistor ) PD - 91366
IRL2203N
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 30V RDS(on) = 7.0mΩ
G S
ID = 116A
Description
Advanced HEXFET® Power MOSFETs from Inte |
 International Rectifier |
 |
| 7 | IRL2203NL | Power MOSFET ( Transistor ) PD - 94394
HEXFET® Power MOSFET
l l l l l l
IRL2203NS IRL2203NL
VDSS = 30V RDS(on) = 7.0mΩ
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
G S
ID = 116A
Description
Advanced HEXFET® Power MOSFET |
International Rectifier |
|
| 6 | IRL2203NL | Power MOSFET ( Transistor ) IRL2203NS/L
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated 100% RG Tested
HEXFET® Power MOSFET
D
VDSS = 30V RDS(on) = 7.0mΩ
G S
ID = 116A
Description
Advanced HEXFET® Power MOSFETs |
 FreesCale |
|
| 5 | IRL2203NLPbF | Power MOSFET ( Transistor ) PD - 95219A
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l 100% RG Tested l Lead-Free
G
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing te |
International Rectifier |
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| Número de pieza | Descripción | Fabricantes | |
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