Datasheet IRL1104PBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRL1104PBF	Power MOSFET ( Transistor ) l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing tec	International Rectifier

IRL1104 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRL1104	HEXFET Power MOSFET PD -91805 IRL1104 HEXFET® Power MOSFET Logic-Level Gate Drive q Advanced Process Technology q Ultra Low On-Resistance q Dynamic dv/dt Rating q 175°C Operating Temperature q Fast Switching q Fully Avalanche Rated Description q D VDSS = 40V G S RDS(on) =	International Rectifier
IRL1104LPBF	HEXFET Power MOSFET PD -95576 Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL1104S) l Low-profile through-hole (IRL1104L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l IRL1104SPbF IRL1104LPbF HEXFET	International Rectifier
IRL1104S	Power MOSFET ( Transistor ) PRELIMINARY l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL1104S) l Low-profile through-hole (IRL1104L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated G Description Fifth Generation HEXFETs from International Rectifier utili	International Rectifier

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