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Datasheet IRL1104 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | IRL1104 | HEXFET Power MOSFET
PD -91805
IRL1104
HEXFET® Power MOSFET
Logic-Level Gate Drive q Advanced Process Technology q Ultra Low On-Resistance q Dynamic dv/dt Rating q 175°C Operating Temperature q Fast Switching q Fully Avalanche Rated Description
q
D
VDSS = 40V
G S
RDS(on) = 0.008Ω ID = 104A
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 International Rectifier |
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| 5 | IRL1104L | Power MOSFET ( Transistor ) PRELIMINARY
l Logic-Level Gate Drive
l Advanced Process Technology l Surface Mount (IRL1104S) l Low-profile through-hole (IRL1104L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processi |
International Rectifier |
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| 4 | IRL1104LPBF | HEXFET Power MOSFET
PD -95576
Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL1104S) l Low-profile through-hole (IRL1104L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l
IRL1104SPbF IRL1104LPbF
HEXFET® Power MOSFET
D
VD |
International Rectifier |
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| 3 | IRL1104PbF | Power MOSFET ( Transistor ) l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing tec |
International Rectifier |
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