IRGSL6B60K
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD - 94575A
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient.
C
IRGB6B60K IRGS6B60K IRGSL6B
IRGSL6B60KD
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD - 94381E
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGB6B60KD IRGS6B60KD IRGSL6B60KD
VCES = 600V IC = 7.0A, TC=100°C
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10
IRGSL6B60KD
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD - 95229
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGB6B60KDPbF IRGS6B60KD IRGSL6B60KD
VCES = 600V IC = 7.0A, TC=100°C
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 1
IRGSL6B60KDPbF
International Rectifier
Insulated Gate Bipolar TransistorPD - 95229C
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Char
IRGSL6B60KPbF
International Rectifier
Insulated Gate Bipolar TransistorINSULATED GATE BIPOLAR TRANSISTOR
PD - 95644A
IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF
Features
• Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Lead-F