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Datasheet IRGS6B60K Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | IRGS6B60K | INSULATED GATE BIPOLAR TRANSISTOR
PD - 94575A
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient.
C
IRGB6B60K IRGS6B60K IRGSL6B60K
VCES = 600V IC = 7.0A, TC=100°C
G |
 International Rectifier |
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| 4 | IRGS6B60KD | INSULATED GATE BIPOLAR TRANSISTOR
PD - 94381E
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGB6B60KD IRGS6B60KD IRGSL6B60KD
VCES = 600V IC = 7.0A, TC=100°C
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square |
International Rectifier |
|
| 3 | IRGS6B60KD | INSULATED GATE BIPOLAR TRANSISTOR
PD - 95229
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGB6B60KDPbF IRGS6B60KD IRGSL6B60KD
VCES = 600V IC = 7.0A, TC=100°C
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Squar |
International Rectifier |
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| 2 | IRGS6B60KDPBF | Insulated Gate Bipolar Transistor PD - 95229C
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Tempe |
International Rectifier |
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