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IRGS4B60KD1 전자부품 데이터시트



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IRGS4B60KD1  

International Rectifier
International Rectifier

IRGS4B60KD1

INSULATED GATE BIPOLAR TRANSISTOR

PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum J



IRGS4B60KD1PBF  

International Rectifier
International Rectifier

IRGS4B60KD1PBF

Insulated Gate Bipolar Transistor

PD - 95616A IRGB4B60KD1PbF IRGS4B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4B60KD1PbF ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA



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