IRGS4B60KD1
International Rectifier
INSULATED GATE BIPOLAR TRANSISTORPD - 95616
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum J
IRGS4B60KD1PBF
International Rectifier
Insulated Gate Bipolar TransistorPD - 95616A
IRGB4B60KD1PbF
IRGS4B60KD1PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4B60KD1PbF
ULTRAFAST SOFT RECOVERY DIODE Features
C VCES = 600V
• Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA