Datasheet IRGPS66160DPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRGPS66160DPBF	Insulated Gate Bipolar Transistor IRGPS66160DPbF VCES = 600V IC = 160A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 120A Applications  Welding  H Bridge Converters Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C G E n-channel G Gate IRGPS66160DPbF Super	International Rectifier

IRGPS66160D Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRGPS66160DPBF	Insulated Gate Bipolar Transistor IRGPS66160DPbF VCES = 600V IC = 160A, TC =100°C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 120A Applications  Welding  H Bridge Converters Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C G E n-channel G Gate IRGP	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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