IRGPS40B120U
IRF
INSULATED GATE BIPOLAR TRANSISTORPD- 94295B
IRGPS40B120U
INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT
C
Features
• Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Super-247 Package.
VCES = 120
IRGPS40B120UD
International Rectifier
Insulated Gate Bipolar Transistor
PD- 94240A
IRGPS40B120UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast Co-Pack IGBT
VCES = 1200V VCE(on) typ. = 3.12V
Features
• Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short C
IRGPS40B120UDP
International Rectifier
Insulated Gate Bipolar Transistor
PD- 95967
IRGPS40B120UDP
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reve
IRGPS40B120UP
International Rectifier
INSULATED GATE BIPOLAR TRANSISTORwww.DataSheet4U.net
PD- 95899A
IRGPS40B120UP
INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT
Features
• Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Super-247 P