IRGP4263DPBF
International Rectifier
Insulated Gate Bipolar Transistor
VCES = 650V IC = 60A, TC =100°C
IRGP4263DPbF IRGP4263D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 48A
Applications • Industrial Motor Drive • UPS