IRGIB10B60KD1PBF
International Rectifier
INSULATED GATE BIPOLAR TRANSISTORwww.DataSheet.co.kr
PD - 94913
IRGIB10B60KD1PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultr
IRGIB10B60KD1P
INSULATED GATE BIPOLAR TRANSISTORPD - 94913
IRGIB10B60KD1P
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive
International Rectifier
PDF