IRG8P50N120KD-EPBF
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
VCES = 1200V IC = 50A, TC =100°C
IRG8P50N120KDPbF IRG8P50N120KD-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ IC = 35A
Applications
• Industrial Motor Drive •