IRG8P08N120KD-EPBF
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR IRG8B08N120KDPbF IRG8P08N120KDPbF
IRG8P08N120KD-EPbF
VCES = 1200V IC = 8A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ IC = 5A
Applications • Industrial Mot